CTLT8099-M322S Todos los transistores

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CTLT8099-M322S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTLT8099-M322S

Código: 89C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.45 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TLM322S

Búsqueda de reemplazo de transistor bipolar CTLT8099-M322S

CTLT8099-M322S Datasheet (PDF)

1.1. ctlt8099-m322s.pdf Size:500K _central

CTLT8099-M322S
CTLT8099-M322S

CTLT8099-M322S www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM™ surface mount package, designed for general purpose amplification and switching in energy efficient applications. MARKING CODE: 89C APPLICAT

5.1. ctlt853-m833.pdf Size:596K _central

CTLT8099-M322S
CTLT8099-M322S

CTLT853-M833 www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80%

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