CTLT853-M833 Todos los transistores

 

CTLT853-M833 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CTLT853-M833
   Código: CHA3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 4.5 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 190 MHz
   Capacitancia de salida (Cc): 38 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TLM833
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CTLT853-M833 Datasheet (PDF)

 ..1. Size:596K  central
 ctlt853-m833.pdf pdf_icon

CTLT853-M833

CTLT853-M833www.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80%

 9.1. Size:500K  central
 ctlt8099-m322s.pdf pdf_icon

CTLT853-M833

CTLT8099-M322Swww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general purpose amplification and switching in energy efficient applications.MARKING CODE: 89CAPPLICAT

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History: 2SD2195 | 3DD3320_AN | 3DD13005_B3 | BSW75 | 2SD874A-R | 2N2113 | DTB543XE

 

 
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