CTLT853-M833 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTLT853-M833

Código: CHA3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 4.5 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 190 MHz

Capacitancia de salida (Cc): 38 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TLM833

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CTLT853-M833 datasheet

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 ctlt853-m833.pdf pdf_icon

CTLT853-M833

CTLT853-M833 www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80%

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CTLT853-M833

CTLT8099-M322S www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general purpose amplification and switching in energy efficient applications. MARKING CODE 89C APPLICAT

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