2N6688 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6688
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2N6688
2N6688 Datasheet (PDF)
2n6688.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6688 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2n6687.pdf
2N6687Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6686.pdf
2N6686Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 180V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6674 2n6675 2n6689 2n6690.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level JAN 2N6674 2N6675 2N6689 2N6690 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6674 2N6675 Unit 2N6689 2N6690 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 7.0 Vdc VE
2n6687.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6687 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2n6686.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6686 DESCRIPTION With TO-3 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for high-power switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA661
History: 2SA661
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050