EMT1DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: EMT1DXV6
   Código: 3T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT563

Búsqueda de reemplazo de transistor bipolar EMT1DXV6

EMT1DXV6 Datasheet (PDF)

..1. Size:176K onsemi
emt1dxv6.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

0.1. Size:49K onsemi
emt1dxv6t1g.pdf

EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS

0.2. Size:51K onsemi
emt1dxv6t1 5.pdf