EMT1DXV6 Datasheet and Replacement
Type Designator: EMT1DXV6
SMD Transistor Code: 3T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT563
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EMT1DXV6 Datasheet (PDF)
emt1dxv6.pdf
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emt1dxv6t1g.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6t1 5.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6t5g.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB201 | 2SA2028 | KT989V
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