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2N6702 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6702
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 90 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO66
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2N6702 Datasheet (PDF)

 ..1. Size:118K  inchange semiconductor
2n6702.pdf pdf_icon

2N6702

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting b

 9.1. Size:132K  cdil
2n6707.pdf pdf_icon

2N6702

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1.

 9.2. Size:67K  cdil
2n6705.pdf pdf_icon

2N6702

Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705TO-237Plastic PackageGeneral Purpose Medium Power AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5VCollector Current Continuous IC 1

 9.3. Size:196K  inchange semiconductor
2n6703.pdf pdf_icon

2N6702

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6703DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators and a variety of power switc

Otros transistores... 2N669 , 2N6690 , 2N6691 , 2N6692 , 2N6693 , 2N67 , 2N670 , 2N6701 , 2SC2655 , 2N6703 , 2N6704 , 2N6705 , 2N6706 , 2N6707 , 2N6708 , 2N6709 , 2N671 .

History: 3DG2785 | 2N94A | 2N5082 | 2N6654A | 2SC2713-BL | BDW63A | NKT239

 

 
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