2N6702 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N6702 Specs and Replacement

Type Designator: 2N6702

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO66

2N6702 Substitution

- BJT ⓘ Cross-Reference Search

2N6702 datasheet

..1. Size:118K inchange semiconductor

2n6702.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6702 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b... See More ⇒

9.1. Size:132K cdil

2n6707.pdf pdf_icon

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1.... See More ⇒

9.2. Size:67K cdil

2n6705.pdf pdf_icon

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1... See More ⇒

9.3. Size:196K inchange semiconductor

2n6703.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6703 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switc... See More ⇒