2SAR502EB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SAR502EB / 2SAR502UB / 2SAR502U3DatasheetPNP 500mA 30V General purpose transistorslOutlinelParameter Value SOT-416FL SOT-323FLVCEO-30VIC-0.5A 2SAR502EB 2SAR502UB(EMT3F) (UMT3F)lFeatures l SOT-323 1)General purpose.2)Complementary NPN types :2SCR502EB(EMT3F)/2SCR502UB(UMT3F)

2SAR502EB / 2SAR502UBDatasheetPNP -500mA -30V General Purpose TransistorslOutline EMT3F UMT3FParameter ValueCollector Collector VCEO-30VBase Base IC-500mAEmitter Emitter 2SAR502UB 2SAR502EB (SC-85) (SC-89) lFeatures1) General Purpose.2) Complementary NPN Types :2SCR502EB (EMT3F) / 2SCR502UB (UMT3F) 3) Large collector current :Ic=max.500mA4) Lo

2SAR553P FRADatasheetMiddle Power Transistor (-50V / -2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1) Low saturation voltageVCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA)2) High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

2SAR513P5DatasheetMiddle Power Transistors(-50V / -1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-1AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging spe

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MCDriver Packaging specifications Inner circuit (Unit : mm)Package T

2SAR552P5DatasheetMiddle Power Transistors (-30V / -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat) =-400mV (Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging sp

Midium Power Transistors (-80V / -0.7A) 2SAR514P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MDDriver Packaging specifications Inner circuit (Unit : mm)Package

2SAR554RDatasheetPNP -1.5A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-1.5ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR554R3)Low VCE(sat)VCE(sat)=-400mV (Max.)(IC/IB=-500mA/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, H

2SAR513P2SAR513PFRADatasheetPNP -1.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-50VBase IC Collector -1.0AEmitter 2SAR513P 2SAR513PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR513PFRA2) Complementary NPN Types : 2SCR513P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -500mA/ -25mA)4) Lead F

General purpose transistor(-50V,-0.1A) 2SAR523M/2SAR523EB/2SAR523UB Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT3Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PBApplications EMT3FSwitch, LED driver (3)Packaging specifications (1) (2)Package VMT3 EMT3F UMT3FAbbreviated symbol : PBPackaging

2SAR514RDatasheetPNP -0.7A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-0.7ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR514R3)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-300mA/-15mA)lApplicationlLOW FREQUENCY AMP

2SAR552P2SAR552PFRADatasheetPNP -3.0A -30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-30VBase IC-3.0A Collector Emitter 2SAR552PFRA2SAR552P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR552P2SCR552PFRA3) Low VCE(sat)VCE(sat)=-0.4V(Max.)(IC/IB= -1A/ -50mA)4) Lead Fr

2SAR553RDatasheetPNP -2.0A -50V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO-50VBase IC-2.0AEmitter 2SAR553R lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR553R3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto

2SAR533P FRADatasheetMiddle Power Transistor(-50V / -3A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPack

2SAR512P FRADatasheetMiddle Power Transistor(-30V/-2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-700mA/-35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPac

2SAR533P Data SheetPNP -3.0A -50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-50VBase IC-3.0ACollector Emitter 2SAR533P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR533P 3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicatio

2SAR554PData SheetPNP -1.5A -80V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-80VBase IC-1.5A Collector Emitter 2SAR554P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR554P3) Low VCE(sat)VCE(sat)= -0.40V(Max.)(IC/IB= -500mA/ -25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplica

2SAR512P5DatasheetMedium Power Transistors(-30V/-2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-0.4V(Max.)(IC/IB=-700mA/-35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specif

Midium Power Transistors (50V / 3A) 2SAR533D Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyCPT36.55.12.3VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)0.5(2)2) High speed switching0.75(3)(1) Structure0.65(1) Base 0.92.32.3(1) (2) (3)0.5PNP Silicon epitaxial planar transistor(2) Collector1.0(3) Emitter In

2SAR553P HZGMiddle Power Transistor (-50V / -2A)DatasheetlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat) = -400mV (Max.)(IC/ IB=-700mA/-35mA)2)High speed switching3)AEC-Q101 QualifiedlApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

2SAR544P Data SheetPNP -2.5A -80V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-80VBase Collector IC-2.5AEmitter 2SAR544P lFeatures(SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplication

2SAR572DDatasheetPNP -5.0A -30V Middle Power TransistorlOutlinelParameter Value CPTVCEO-30VIC-5A 2SAR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR572D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-2A/-100mA)4) Lead

2SAR514PFRA2SAR514PDatasheetPNP -0.7A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBase Collector IC-0.7AEmitter 2SAR514P 2SAR514PFRAlFeatures(SC-62) 1) Suitable for Middle Power Driver2SCR514PFRA2) Complementary NPN Types : 2SCR514P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -300mA/ -15mA)4) Lead

2SAR586D3PNP -5.0A -80V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO-80VIC-5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary NPN Types : 2SCR586D3.3) Low VCE(sat)VCE(sat)=-320mV(Max.).(IC/IB=-2A/-100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging spec

Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyCPT36.5(SC-63)5.12.3VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.52) High speed switching StructurePNP Silicon epitaxial planar transistor0.750.650.9 2.3(1) (2) (3)2.3 0.5 Applications1.0Driver Packaging spe

2SAR544P 2SAR544PFRAData SheetPNP -2.5A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBaseCollectorIC-2.5AEmitter2SAR544PFRA2SAR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR544P2SCR544PFRA3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS

2SAR542F3DatasheetPNP -3.0A -30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO-30VIC-3A2SAR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=-0.20V(Max.).(IC/IB=-1A/-50mA)3) High collector current.IC=-3A(max),

2SAR542PData SheetPNP -5.0A -30V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-30VBase Collector IC-5.0AEmitter 2SAR542P lFeatures(SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -2A/ -100mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplications

2SAR554P5DatasheetMiddle Power Transistors (-80V / -1.5V)lOutlinel SOT-89 Parameter Value SC-62 VCEO-80VIC-1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-400mV (Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackag

2SAR562F3Datasheet PNP -6A -30V Middle Power TransistorlOutlineHUML2020L3Parameter ValueCollector VCEO-30VCollector Base IC-6AEmitter Emitter Base lFeatures2SAR562F3 1) Suitable for Middle Power Driver2) Low VCE(sat) VCE(sat)= -300mV(Max.) (IC/IB= -3A/ -60mA)3) High collector current IC = -6A (max) , ICP = -7A (max)4) Leadless small SMD package "HU

2SAR512RDatasheetPNP -2.0A -30V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO-30VBase IC-2.0AEmitter 2SAR512R (SC-96) lFeatures1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR512R3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto

General purpose transistor(-20V,-0.2A) 2SAR522M / 2SAR522EB / 2SAR522UB Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT3Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PCApplications EMT3FSwitch, LED driver (3)Packaging specifications Package VMT3 EMT3F UMT3F(1) (2)Packaging Type Taping Tap

Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorTSMT3 Features1) Low saturation voltage(3)VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching(1) (2)(1) Base Applications (2) Emitter(3) Collector Abbreviated symbol : MRDriver Packaging specifications Inner

Medium Power Transistors (-30V / -2A) 2SAR512P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorMPT3 Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA)(1) (2) (3)2) High speed switching(1)Base Applications(2)CollectorAbbreviated symbol : MB(3)EmitterDriver Packaging specifications Inner circuit

2SAR573D FHGDatasheetPNP -3.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutlinel TO-252 Parameter Value SC-63 VCEO-50VIC-3ACPTlFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)lApplicationl

2SAR553PData SheetPNP -2.0A -50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-50VBase ICCollector -2.0AEmitter 2SAR553P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR553P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplica

2SAR523M / 2SAR523EB / 2SAR523UBDatasheetPNP -100mA -50V General Purpose TransistorlOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-100mA 2SAR523M 2SAR523EB(VMT3) (EMT3F) SOT-323FL 2SAR523UB(UMT3F) lFeatures lInner ci

2SAR553P5DatasheetMidium Power Transistors (-50V / -2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1) Low saturation voltage, typicallyVCE(sat) = -0.4V (Max.) (IC/ IB= -700mA / -35mA)2) High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging

2SAR542P FRADatasheetMiddle Power Transistor (-30V / -5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-5AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat) =-400mV (Max.)(IC/IB=-2A/-100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGl

2SAR572D3PNP -5.0A -30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO-30VIC-5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary NPN Types : 2SCR572D3.3) Low VCE(sat)VCE(sat)=-400mV(Max.).(IC/IB=-2A/-100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging spec

2SAR513RDatasheetPNP -1.0A -50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-50VIC-1ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR513R3)Low VCE(sat)VCE(sat)=-400mV(Max.)(IC/IB=-500A/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, HIGH

2SAR574DDatasheetPNP -2.0A -80V Middle Power TransistorlOutlinelParameter Value CPTVCEO-80VIC-2A 2SAR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR574D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead

2SAR554P2SAR554PFRADatasheetPNP -1.5A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBase IC-1.5A Collector Emitter 2SAR554PFRA2SAR554P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR554P2SCR554PFRA3) Low VCE(sat)VCE(sat)= -0.40V(Max.)(IC/IB= -500mA/ -25mA)4) Lead

2SAR533P5DatasheetMedium Power Transistors(-50V / -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specif

Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MFDriver Packaging specifications Inner circuit (Unit : mm)Package Tapi

Midium Power Transistors (-50V / -4A) 2SAR543D Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

2SAR573DDatasheetPNP -3.0A -50V Middle Power TransistorlOutlinelParameter Value CPTVCEO-50VIC-3A 2SAR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead

2SAR544RDatasheetPNP -2.5A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-2.5ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR544R3)Low VCE(sat)VCE(sat)=-400mV (Max.)(IC/IB=-1A/-50mA)lApplicationlLOW FREQUENCY AMPLIFIER, HIGH

isc Silicon PNP Power Transistor 2SAR586DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.32V@(I =-2A,I =-100mA)CE(sat) C BComplementary NPN types:2SCR586D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon PNP Power Transistor 2SAR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-2A,I =-0.1A)CE(sat) C BComplementary NPN types:2SCR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon PNP Power Transistor 2SAR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon PNP Power Transistor 2SAR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE