2N671 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

NPN SILICON PLANAR 2N67162N6717MEDIUM POWER TRANSISTORS2N6718ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I

NPN SILICON PLANAR2N6714MEDIUM POWER TRANSISTORS2N6715ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I

UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6

IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified Manufacturer2N6714TO-237 Plastic Package2N67152N6716Boca Semiconductor Corp. BSC http://www.bocasemi.comNPN SILICON PLANAR EPITAXIAL TRANSISTORSDesigned for General purpose Medium Power Amplifier and Switching Circuits.1 = EMITTER2 = BA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application2. BASE3. COLLECTOR Equivalent Circuit 1

Spec. No. : HT200701 HI-SINCERITY Issued Date : 2007.08.01 Revised Date : 2007.08.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................

Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.05.03MICROELECTRONICS CORP.Page No. : 1/5H2N6718LNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718L is designed for general purpose medium power amplifier andswitching applications.FeaturesTO-92 High Power: 850mW High Current: 1AAbsolute Maximum Ratings Maximum TemperaturesSt

Spec. No. : HE6616HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5H2N6718VNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718V is designed for general purpose medium power amplifier andswitching.TO-126MLAbsolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................................

2N67183DA6718 NPN /SILICON NPN TRANSISTOR : Purpose: Designed for general purpose medium power amplifier and switching. : Features: High V , large current. CEO /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 100 V CBO

NPN SILICON PLANAR 2N67162N6717MEDIUM POWER TRANSISTORS2N6718ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I