All Transistors. 2N671 Datasheet

 

2N671 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N671
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO31

 2N671 Transistor Equivalent Substitute - Cross-Reference Search

   

2N671 Datasheet (PDF)

 0.1. Size:50K  central
2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf

2N671

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.2. Size:63K  central
2n6714 2n6715 2n6726 2n6727.pdf

2N671

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.3. Size:27K  diodes
2n6716 2n6717 2n6718.pdf

2N671

NPN SILICON PLANAR 2N67162N6717MEDIUM POWER TRANSISTORS2N6718ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I

 0.4. Size:26K  diodes
2n6714 2n6715.pdf

2N671

NPN SILICON PLANAR2N6714MEDIUM POWER TRANSISTORS2N6715ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I

 0.5. Size:160K  utc
2n6718.pdf

2N671
2N671

UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N6

 0.6. Size:43K  bocasemi
2n6714 2n6715 2n6716.pdf

2N671
2N671

IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified Manufacturer2N6714TO-237 Plastic Package2N67152N6716Boca Semiconductor Corp. BSC http://www.bocasemi.comNPN SILICON PLANAR EPITAXIAL TRANSISTORSDesigned for General purpose Medium Power Amplifier and Switching Circuits.1 = EMITTER2 = BA

 0.7. Size:506K  jiangsu
2n6718.pdf

2N671
2N671

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. EMITTER General Purpose Switching Application2. BASE3. COLLECTOR Equivalent Circuit 1

 0.8. Size:82K  hsmc
h2n6718t.pdf

2N671
2N671

Spec. No. : HT200701 HI-SINCERITY Issued Date : 2007.08.01 Revised Date : 2007.08.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................

 0.9. Size:51K  hsmc
h2n6718l.pdf

2N671
2N671

Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.05.03MICROELECTRONICS CORP.Page No. : 1/5H2N6718LNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718L is designed for general purpose medium power amplifier andswitching applications.FeaturesTO-92 High Power: 850mW High Current: 1AAbsolute Maximum Ratings Maximum TemperaturesSt

 0.10. Size:44K  hsmc
h2n6718v.pdf

2N671
2N671

Spec. No. : HE6616HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5H2N6718VNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6718V is designed for general purpose medium power amplifier andswitching.TO-126MLAbsolute Maximum Ratings Maximum TemperaturesStorage Temperature ...............................................

 0.11. Size:259K  lzg
2n6718 3da6718.pdf

2N671
2N671

2N67183DA6718 NPN /SILICON NPN TRANSISTOR : Purpose: Designed for general purpose medium power amplifier and switching. : Features: High V , large current. CEO /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 100 V CBO

 0.12. Size:28K  zetex
2n6717.pdf

2N671

NPN SILICON PLANAR 2N67162N6717MEDIUM POWER TRANSISTORS2N6718ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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