2SAR533PFRA Todos los transistores

 

2SAR533PFRA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SAR533PFRA
   Código: MM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 24 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar 2SAR533PFRA

 

2SAR533PFRA Datasheet (PDF)

 ..1. Size:1560K  rohm
2sar533pfra.pdf

2SAR533PFRA
2SAR533PFRA

2SAR533P FRADatasheetMiddle Power Transistor(-50V / -3A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat)=-400mV(Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPack

 6.1. Size:1667K  rohm
2sar533p.pdf

2SAR533PFRA
2SAR533PFRA

2SAR533P Data SheetPNP -3.0A -50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-50VBase IC-3.0ACollector Emitter 2SAR533P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR533P 3) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicatio

 6.2. Size:1823K  rohm
2sar533p5.pdf

2SAR533PFRA
2SAR533PFRA

2SAR533P5DatasheetMedium Power Transistors(-50V / -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=-400mV(Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specif

 7.1. Size:421K  rohm
2sar533d.pdf

2SAR533PFRA
2SAR533PFRA

Midium Power Transistors (50V / 3A) 2SAR533D Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyCPT36.55.12.3VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)0.5(2)2) High speed switching0.75(3)(1) Structure0.65(1) Base 0.92.32.3(1) (2) (3)0.5PNP Silicon epitaxial planar transistor(2) Collector1.0(3) Emitter In

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BD882-GR | D44TE3 | 2SC2960 | BF315

 

 
Back to Top