2SAR573DFHG
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SAR573DFHG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 35
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
SC63
Búsqueda de reemplazo de transistor bipolar 2SAR573DFHG
2SAR573DFHG
Datasheet (PDF)
..1. Size:1463K rohm
2sar573dfhg.pdf 
2SAR573D FHGDatasheetPNP -3.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutlinel TO-252 Parameter Value SC-63 VCEO-50VIC-3ACPTlFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)lApplicationl
6.1. Size:801K rohm
2sar573d.pdf
2SAR573DDatasheetPNP -3.0A -50V Middle Power TransistorlOutlinelParameter Value CPTVCEO-50VIC-3A 2SAR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead
6.2. Size:178K inchange semiconductor
2sar573d.pdf
isc Silicon PNP Power Transistor 2SAR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.1. Size:800K rohm
2sar572d.pdf
2SAR572DDatasheetPNP -5.0A -30V Middle Power TransistorlOutlinelParameter Value CPTVCEO-30VIC-5A 2SAR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR572D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-2A/-100mA)4) Lead
8.2. Size:1659K rohm
2sar572d3.pdf
2SAR572D3PNP -5.0A -30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO-30VIC-5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary NPN Types : 2SCR572D3.3) Low VCE(sat)VCE(sat)=-400mV(Max.).(IC/IB=-2A/-100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging spec
8.3. Size:801K rohm
2sar574d.pdf
2SAR574DDatasheetPNP -2.0A -80V Middle Power TransistorlOutlinelParameter Value CPTVCEO-80VIC-2A 2SAR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR574D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead
8.4. Size:177K inchange semiconductor
2sar572d.pdf
isc Silicon PNP Power Transistor 2SAR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-2A,I =-0.1A)CE(sat) C BComplementary NPN types:2SCR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.5. Size:190K inchange semiconductor
2sar574d.pdf
isc Silicon PNP Power Transistor 2SAR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
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