2SAR573DFHG Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SAR573DFHG
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SC63
2SAR573DFHG Transistor Equivalent Substitute - Cross-Reference Search
2SAR573DFHG Datasheet (PDF)
2sar573dfhg.pdf
2SAR573D FHGDatasheetPNP -3.0A -50V Middle Power TransistorAEC-Q101 QualifiedlOutlinel TO-252 Parameter Value SC-63 VCEO-50VIC-3ACPTlFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)lApplicationl
2sar573d.pdf
2SAR573DDatasheetPNP -3.0A -50V Middle Power TransistorlOutlinelParameter Value CPTVCEO-50VIC-3A 2SAR573D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR573D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead
2sar573d.pdf
isc Silicon PNP Power Transistor 2SAR573DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR573D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sar572d.pdf
2SAR572DDatasheetPNP -5.0A -30V Middle Power TransistorlOutlinelParameter Value CPTVCEO-30VIC-5A 2SAR572D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR572D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-2A/-100mA)4) Lead
2sar572d3.pdf
2SAR572D3PNP -5.0A -30V Power TransistorDatasheetlOutlinel Parameter Value DPAK VCEO-30VIC-5ATO-252lFeatures lInner circuitl l1) Suitable for Power Driver.2) Complementary NPN Types : 2SCR572D3.3) Low VCE(sat)VCE(sat)=-400mV(Max.).(IC/IB=-2A/-100mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging spec
2sar574d.pdf
2SAR574DDatasheetPNP -2.0A -80V Middle Power TransistorlOutlinelParameter Value CPTVCEO-80VIC-2A 2SAR574D lFeaturesl1) Suitable for Middle Power Driver. lInner circuitl2) Complementary NPN Types : 2SCR574D.3) Low VCE(sat)VCE(sat)=-0.40V(Max.).(IC/IB=-1A/-50mA)4) Lead
2sar572d.pdf
isc Silicon PNP Power Transistor 2SAR572DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-2A,I =-0.1A)CE(sat) C BComplementary NPN types:2SCR572D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sar574d.pdf
isc Silicon PNP Power Transistor 2SAR574DDESCRIPTIONSuitable for middle power driversLow VCE(sat)V -0.4V@(I =-1A,I =-50mA)CE(sat) C BComplementary NPN types:2SCR574D100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
