2SB1197KGP Datasheet. Equivalente

 ..1. Size:86K  chenmko
 2sb1197kgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High satu

 6.1. Size:1392K  rohm
 2sb1197k.pdf

2SB1197K Datasheet Low Frequency Transistor (-32V, -0.8A) lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -800mA SMT3 lFeatures lInner circuit l l 1) Low VCE(sat). VCE(sat) -500mV ( IC= -500mA / IB= -50mA) 2) IC= -0.8A. 3) Complements the 2SD1781K. lApplication l LOW FREQUENCY POWER AMPLIFIER lPackaging specif

 6.2. Size:620K  secos
 2sb1197k.pdf

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 3 Top View C B MECHANICAL DATA 1 Case SC-59, 1 2 2 K E Weight 0.008 grams(approx.) D CLASSIFICATION OF hFE H J

 6.3. Size:198K  lge
 2sb1197k sot-23-3l.pdf

2SB1197K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Power amplifier 0.15 1.90 MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

 6.4. Size:310K  willas
 2sb1197kxlt1.pdf

FM120-M WILLAS 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to PNP Silicon

 6.5. Size:117K  lrc
 l2sb1197krlt1g.pdf

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 6.6. Size:113K  lrc
 l2sb1197kqlt1g.pdf

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 6.7. Size:319K  slkor
 2sb1197k-q 2sb1197k-r.pdf

2SB1197K Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)