2SB1184P Todos los transistores

 0.1. Size:39K  kexin
 2sb1184p-q-r.pdf

SMD Type Transistors Power transistor 2SB1184 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). PNP silicon transistor. Epitaxial planar type 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V

 7.1. Size:75K  rohm
 2sb1184.pdf

 7.2. Size:166K  rohm
 2sb1184 2sb1243.pdf

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 C0.5 2) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.5 0.1 Structure 0.65Max. 0.65 0.1 0.75 Epitaxial planar type 0.9 PNP silicon transistor 0.55 0

 7.3. Size:129K  rohm
 2sb1184 2sb1243 2sb1185.pdf

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FEle

 7.4. Size:804K  jiangsu
 2sb1184.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L 2SB1184 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 1. BASE Complements the 2SD1760 / 2SD1864. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector Base Voltage -

 7.5. Size:210K  lge
 2sb1184.pdf

2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Ba

 7.6. Size:451K  wietron
 2sb1184.pdf

2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b P b Lead(Pb)-Free Features 1.BASE 1.BASE 2.COLLECTOR 2.COLLECTOR * Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) ). 3.EMITTER 3.EMITTER TO-251 MAXIMUM RATINGS (TA=25 C unless otherwise noted) TO-251 Symbol Value Parameter Unit Collector-Base Voltage V -60 V CBO V -50 V Collector-Emitter Voltage CEO V Emitte

 7.7. Size:1218K  kexin
 2sb1184.pdf

SMD Type Transistors PNP Transistors 2SB1184 TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD1760 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 7.8. Size:196K  lzg
 2sb1184 3ca1184.pdf

2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications , 2SD1760(3DA1760) Features Low V complements the 2SD1760(3DA1760). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO

 7.9. Size:240K  inchange semiconductor
 2sb1184.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1184 DESCRIPTION Low V CE(sat) Small and slim package Complements the 2SD1760/2SD1864 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CB