SMD Type TransistorsPower transistor2SB1184TO-252Unit: mmFeatures+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).PNP silicon transistor.Epitaxial planar type0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -60 V

2SB1184 / 2SB1243TransistorsPower Transistor (-60V, -3A)2SB1184 / 2SB1243 Features External dimensions (Units : mm)1) Low VCE(sat).2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = -2A / -0.2A)C0.55.1 +0.2 -0.1 0.50.12) Complements the 2SD1760 / 2SD1864.0.65Max.0.650.10.750.90.550.10.50.1 Structure2.3

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1184 2SB1243VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.50.26.80.22.3 +0.26.50.2 -0.1C0.52) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.50.1Structure 0.65Max.0.650.10.75Epitaxial planar type 0.9PNP silicon transistor 0.550

TransistorsPower Transistor (*60V, *3A)2SB1184 / 2SB1243 / 2SB1185FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1760 /2SD1864 / 2SD1762.FStructureEpitaxial planar typePNP silicon transistor(96-128-B57)223Transistors 2SB1184 / 2SB1243 / 2SB1185FAbsolute maximum ratings (Ta = 25_C)FEle

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L2SB1184 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 1. BASE Complements the 2SD1760 / 2SD1864. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector Base Voltage -

2SB1184(PNP)TO-251/TO-252-2L Transistor TO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Ba

2SB1184PNP PLASTIC ENCAPSULATE TRANSISTORSP bP b Lead(Pb)-FreeFeatures:1.BASE1.BASE2.COLLECTOR2.COLLECTOR* Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)).3.EMITTER3.EMITTERTO-251MAXIMUM RATINGS (TA=25C unless otherwise noted) TO-251Symbol ValueParameter UnitCollector-Base VoltageV -60VCBOV-50 VCollector-Emitter Voltage CEOVEmitte

SMD Type TransistorsPNP Transistors2SB1184TO-252Unit: mm+0.156.50-0.15 Features +0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD17600.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications :, 2SD1760(3DA1760) Features: Low V complements the 2SD1760(3DA1760). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1184DESCRIPTIONLow VCE(sat)Small and slim packageComplements the 2SD1760/2SD1864100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCB