2SB1073Q Todos los transistores

 

2SB1073Q Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1073Q
   Código: IQ
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89
 

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2SB1073Q datasheet

 7.1. Size:196K  mcc
2sb1073r-q.pdf pdf_icon

2SB1073Q

MCC Micro Commercial Components TM 2SB1073-Q 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1073-R Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

 7.2. Size:35K  panasonic
2sb1073 e.pdf pdf_icon

2SB1073Q

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

 7.3. Size:35K  panasonic
2sb1073.pdf pdf_icon

2SB1073Q

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

 7.4. Size:581K  jiangsu
2sb1073.pdf pdf_icon

2SB1073Q

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value Unit VCBO -30 V Collector-Base V

Otros transistores... 2SB1182P , 2SB1182Q , 2SB1182R , 2SB1184P , 2SB1184Q , 2SB1184R , 2SB0950 , 2SB0950A , C945 , 2SB1073R , INA1001AC1 , INA6001AC1 , INA6001AP1 , INA6002AC1 , INA6005AC1 , INA6005AP1 , INA6006AC1 .

History: 2SB540

 

 

 


 
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