2SB1073Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCCMicro Commercial ComponentsTM 2SB1073-Q20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1073-RPhone: (818) 701-4933Fax: (818) 701-4939Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value UnitVCBO -30 VCollector-Base V

2SB1 07 3TRANSISTORFEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -30 VCollector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ

2SB1073 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.6B4.42 1.63. EMITTER 1.81.41.43 Features 2.64.252.43.75 Low collector-emitter saturation voltage VCE(sat) 0.8MIN0.53Large peak collector current IC 0.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Dimensions in inches and (mil

FM120-M WILLAS THRU2SB1073 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR r reverse leakage current and thermal resistance.(PNP) betteSOD-123HSOT-89 LoFEATURES w profile s

SMD Type TransistorsPNP Transistors2SB1073 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE