All Transistors. 2SB1073Q Datasheet

 

2SB1073Q Datasheet and Replacement


   Type Designator: 2SB1073Q
   SMD Transistor Code: IQ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89
 

 2SB1073Q Substitution

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2SB1073Q Datasheet (PDF)

 7.1. Size:196K  mcc
2sb1073r-q.pdf pdf_icon

2SB1073Q

MCCMicro Commercial ComponentsTM 2SB1073-Q20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1073-RPhone: (818) 701-4933Fax: (818) 701-4939Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

 7.2. Size:35K  panasonic
2sb1073 e.pdf pdf_icon

2SB1073Q

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

 7.3. Size:35K  panasonic
2sb1073.pdf pdf_icon

2SB1073Q

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

 7.4. Size:581K  jiangsu
2sb1073.pdf pdf_icon

2SB1073Q

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value UnitVCBO -30 VCollector-Base V

Datasheet: 2SB1182P , 2SB1182Q , 2SB1182R , 2SB1184P , 2SB1184Q , 2SB1184R , 2SB0950 , 2SB0950A , 2N5401 , 2SB1073R , INA1001AC1 , INA6001AC1 , INA6001AP1 , INA6002AC1 , INA6005AC1 , INA6005AP1 , INA6006AC1 .

History: 2SC3122 | CSC3968B | 2SC3365

Keywords - 2SB1073Q transistor datasheet

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