2SB1073Q PDF and Equivalents Search

 

2SB1073Q Specs and Replacement

Type Designator: 2SB1073Q

SMD Transistor Code: IQ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

 2SB1073Q Substitution

- BJT ⓘ Cross-Reference Search

 

2SB1073Q datasheet

 7.1. Size:196K  mcc

2sb1073r-q.pdf pdf_icon

2SB1073Q

MCC Micro Commercial Components TM 2SB1073-Q 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1073-R Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi... See More ⇒

 7.2. Size:35K  panasonic

2sb1073 e.pdf pdf_icon

2SB1073Q

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4... See More ⇒

 7.3. Size:35K  panasonic

2sb1073.pdf pdf_icon

2SB1073Q

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4... See More ⇒

 7.4. Size:581K  jiangsu

2sb1073.pdf pdf_icon

2SB1073Q

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value Unit VCBO -30 V Collector-Base V... See More ⇒

Detailed specifications: 2SB1182P , 2SB1182Q , 2SB1182R , 2SB1184P , 2SB1184Q , 2SB1184R , 2SB0950 , 2SB0950A , C945 , 2SB1073R , INA1001AC1 , INA6001AC1 , INA6001AP1 , INA6002AC1 , INA6005AC1 , INA6005AP1 , INA6006AC1 .

History: BTB589N3 | A1267

Keywords - 2SB1073Q pdf specs

 2SB1073Q cross reference

 2SB1073Q equivalent finder

 2SB1073Q pdf lookup

 2SB1073Q substitution

 2SB1073Q replacement

 

 

 


 
↑ Back to Top
.