INA6002AC1 Todos los transistores

 ..1. Size:144K  isahaya
 ina6002ac1.pdf

INA6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCLIPTION OUTLINE DRAWING Unit mm INA6002AC1 is a silicon PNP epitaxial type transistor. 2.8 0.65 1.5 0.65 It is designed with high voltage. FEATURE (1) Super mini package for easy mounting. (3) (2) Hige voltage VCEO=-300V APPLICATION DC/DC convertor, High vol

 8.1. Size:157K  isahaya
 ina6006ac1.pdf

INA6006AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6006AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE

 8.2. Size:107K  isahaya
 ina6005ac1.pdf

INA6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6005AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=-400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector J

 8.3. Size:110K  isahaya
 ina6005ap1.pdf

 8.4. Size:158K  isahaya
 ina6006as1.pdf

PRELIMINARY INA6006AS1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INA6006AS1 is a silicon PNP transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi

 8.5. Size:134K  isahaya
 ina6001ap1.pdf

PRELIMINARY INA6001AP1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INA6001AP1 is a silicon PNP transistor. 4.6 MAX It is designed with high voltage. 1.5 1.6 FEATURE Small package for easy mountin

 8.6. Size:161K  isahaya
 ina6006ap1.pdf

 8.7. Size:106K  isahaya
 ina6001ac1.pdf

INA6001AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack