Биполярный транзистор INA6002AC1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: INA6002AC1
Маркировка: 3W
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 2.6 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SOT23
Аналоги (замена) для INA6002AC1
INA6002AC1 Datasheet (PDF)
ina6002ac1.pdf
INA6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCLIPTION OUTLINE DRAWING Unitmm INA6002AC1 is a silicon PNP epitaxial type transistor. 2.8 0.65 1.5 0.65 It is designed with high voltage. FEATURE (1)Super mini package for easy mounting. (3) (2)Hige voltage VCEO=-300V APPLICATION DC/DC convertor, High vol
ina6006ac1.pdf
INA6006AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA6006AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE
ina6005ac1.pdf
INA6005AC1FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA6005AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=-400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector J
ina6005ap1.pdf
INA6005AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6005AP1 is a silicon PNP transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. CE BHigh voltage VCEO = -400V 0.53 0.4MAX0.48 MAX1.53.0APPLICATION
ina6006as1.pdf
PRELIMINARY INA6006AS1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6006AS1 is a silicon PNP transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi
ina6001ap1.pdf
PRELIMINARY INA6001AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6001AP1 is a silicon PNP transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin
ina6006ap1.pdf
INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6006AP1 is a silicon PNP transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = -150V CE BLow voltage VCE(sat) = -0.5V(MAX) Complementary
ina6001ac1.pdf
INA6001AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA6001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
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