INA6005AP1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: INA6005AP1
Código: BC
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 65 MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hfe): 82
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar INA6005AP1
INA6005AP1 Datasheet (PDF)
ina6005ap1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INA6005AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6005AP1 is a silicon PNP transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. CE BHigh voltage VCEO = -400V 0.53 0.4MAX0.48 MAX1.53.0APPLICATION
ina6005ac1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INA6005AC1FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA6005AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=-400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector J
ina6006ac1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INA6006AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA6006AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE
ina6006as1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PRELIMINARY INA6006AS1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6006AS1 is a silicon PNP transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi
ina6001ap1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PRELIMINARY INA6001AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6001AP1 is a silicon PNP transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin
ina6006ap1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6006AP1 is a silicon PNP transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = -150V CE BLow voltage VCE(sat) = -0.5V(MAX) Complementary
ina6001ac1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INA6001AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA6001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
ina6002ac1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INA6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCLIPTION OUTLINE DRAWING Unitmm INA6002AC1 is a silicon PNP epitaxial type transistor. 2.8 0.65 1.5 0.65 It is designed with high voltage. FEATURE (1)Super mini package for easy mounting. (3) (2)Hige voltage VCEO=-300V APPLICATION DC/DC convertor, High vol
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .