INA6005AP1 Specs and Replacement
Type Designator: INA6005AP1
SMD Transistor Code: BC
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Package: SOT89
INA6005AP1 Substitution
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INA6005AP1 datasheet
INA6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6005AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=-400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector J... See More ⇒
INA6006AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA6006AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE... See More ⇒
PRELIMINARY INA6006AS1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INA6006AS1 is a silicon PNP transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi... See More ⇒
Detailed specifications: 2SB0950A, 2SB1073Q, 2SB1073R, INA1001AC1, INA6001AC1, INA6001AP1, INA6002AC1, INA6005AC1, BC337, INA6006AC1, INA6006AP1, INA6006AS1, KZT949, KZT951, KZT953, INC1001AC1, INC2001AC1
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