ISC3242AS1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISC3242AS1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 28
pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
SC72
Búsqueda de reemplazo de transistor bipolar ISC3242AS1
ISC3242AS1
Datasheet (PDF)
..1. Size:232K isahaya
isc3242as1.pdf
SMALL-SIGNAL TRANSISTOR ISC3242AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3242AS1 is a silicon NPN epitaxial type transistor 4.0 designed for small type motor drive, solenoid drive and power supply application. Complementary with 2SA1998. 0.1 FEATURE High collector current. IC=2A 0
8.1. Size:169K isahaya
isc3249as1.pdf
SMALL-SIGNAL TRANSISTOR ISC3249AS1 FOR SMALL TYPE COLOR TV CHROMA OUTPUT APPLICATIONSILICON NPN TRIPLE DIFFUSED TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3249AS1 is a silicon NPN triple diffused transistor 4.0 designed for color TV chroma output circuit, high voltage switching circuit application. 0.1 FEATURE High voltage. VCEo=250V 0.45 High gai
8.2. Size:253K isahaya
isc3247as1.pdf
SMALL-SIGNAL TRANSISTOR ISC3247AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3247AS1 is a silicon NPN epitaxial type transistor. 4.0 Designed with high voltage, high collector current, dissipation and high hFE. 0.1 FEATURE 0.45 High hFE. hFE=600 to 1800 High voltage. VCEo=50V 2.5 2.
8.3. Size:155K isahaya
isc3244as1.pdf
SMALL-SIGNAL TRANSISTOR ISC3244AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3244AS1 is a silicon NPN epitaxial type transistor 4.0 designed with high collector dissipation, high voltage. Complementary with SA1284AS1. 0.1 FEATURE High voltage. VCEo=100V 0.45 High peak collector c
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