IMB11AFRA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IMB11AFRA  📄📄 

Código: B11

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: SC74

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IMB11AFRA datasheet

 ..1. Size:1340K  rohm
 emb11fha umb11nfha imb11afra.pdf pdf_icon

IMB11AFRA

EMB11FHA / UMB11NFHA / IMB11AFRA EMB11 / UMB11N / IMB11A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 10kW EMB11 UMB11N EMB11FHA UMB11NFHA R2 10kW (SC-107C) SOT-353 (S

 8.1. Size:69K  rohm
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IMB11AFRA

EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A Features External dimensions (Unit mm) 1) Two DTA114E chips in a EMT or UMT or SMT EMB11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating inte

 8.2. Size:62K  rohm
 umb11n imb11a b11 sot23-6 sot363.pdf pdf_icon

IMB11AFRA

Transistors General purpose (dual digital transistors) UMB11N / IMB11A FFeatures FExternal dimensions (Units mm) 1) Two DTA114Es in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silic

 9.1. Size:87K  chenmko
 chimb11gp.pdf pdf_icon

IMB11AFRA

CHENMKO ENTERPRISE CO.,LTD CHIMB11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) SC-74/SOT-457 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) * High saturatio

MOSTRAR MÁS

Otros transistores... KZT489, KZT491, KZT549, KZT589, KZT2955, KZT3055, KZT3904, IMB10AFRA, BC549, IR413, ISA1235AC1, ISA1283AS1, ISA1284AS1, ISA1286AS1, ISA1287AS1, ISA1399AS1, ISA1530AC1