IMB11AFRA Datasheet. Specs and Replacement
Type Designator: IMB11AFRA 📄📄
SMD Transistor Code: B11
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SC74
IMB11AFRA Substitution
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IMB11AFRA datasheet
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Transistors General purpose (dual digital transistors) UMB11N / IMB11A FFeatures FExternal dimensions (Units mm) 1) Two DTA114Es in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silic... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHIMB11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) SC-74/SOT-457 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) * High saturatio... See More ⇒
Detailed specifications: KZT489, KZT491, KZT549, KZT589, KZT2955, KZT3055, KZT3904, IMB10AFRA, BC549, IR413, ISA1235AC1, ISA1283AS1, ISA1284AS1, ISA1286AS1, ISA1287AS1, ISA1399AS1, ISA1530AC1
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