ISA1235AC1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISA1235AC1
Código: .MF_.ME
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar ISA1235AC1
ISA1235AC1 Datasheet (PDF)
isa1235ac1 isa1602am1.pdf
SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati
sisa12adn.pdf
New ProductSiSA12ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0043 at VGS = 10 V 25 Material categorization:30 13.6 nC0.0060 at VGS = 4.5 V For definitions of compliance please see 25www.vishay.com/doc?99912PowerPAK
sisa12dn.pdf
New ProductSiSA12DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.)Definition TrenchFET Gen IV Power MOSFET0.0043 at VGS = 10 V 2530 13.6 nC 100 % Rg and UIS Tested0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/ECAPPLICAT
isa1287as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1287AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1287AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high voltage, high collector current, dissipation and high hFE. Complementary with ISC3247AS1. 0.1 FEATURE High hFE hFE=400 to 800 0.45
isa1284as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1284AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1284AS1 is a silicon PNP epitaxial type transistor 4.0 designed for high voltage application. Complementary with ISC3244AS1. FEATURE 0.1 High voltage VCEO=-100V High peak collector current. ICM=-800mA 0.45
isa1283as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1283AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1283AS1 is a silicon PNP epitaxial type transistor 4.0 designed for relay drive or power supply application. Complementary with 2SC5482. FEATURE 0.1 High voltage VCEO=-60V High collector current. IC=-1A 0.
isa1286as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1286AS1 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1286AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high collector current and high hFE. Complementary with 2SC5484. FEATURE 0.1 High hFE hFE=400 to 800 High collector current. (IC=-1.5
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: L8550PLT3G | L2SA1037AKQLT1G
History: L8550PLT3G | L2SA1037AKQLT1G
Liste
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