ISA1235AC1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMALL-SIGNAL TRANSISTOR ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING UNIT mm DESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.1 2.8 These are designed for low frequency voltage 0.425 1.25 0.425 1.5 0.65 0.65 amplify applicati

New Product SiSA12ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0043 at VGS = 10 V 25 Material categorization 30 13.6 nC 0.0060 at VGS = 4.5 V For definitions of compliance please see 25 www.vishay.com/doc?99912 PowerPAK

New Product SiSA12DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) Definition TrenchFET Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/EC APPLICAT

SMALL-SIGNAL TRANSISTOR ISA1284AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1284AS1 is a silicon PNP epitaxial type transistor 4.0 designed for high voltage application. Complementary with ISC3244AS1. FEATURE 0.1 High voltage VCEO=-100V High peak collector current. ICM=-800mA 0.45

SMALL-SIGNAL TRANSISTOR ISA1283AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1283AS1 is a silicon PNP epitaxial type transistor 4.0 designed for relay drive or power supply application. Complementary with 2SC5482. FEATURE 0.1 High voltage VCEO=-60V High collector current. IC=-1A 0.

SMALL-SIGNAL TRANSISTOR ISA1286AS1 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1286AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high collector current and high hFE. Complementary with 2SC5484. FEATURE 0.1 High hFE hFE=400 to 800 High collector current. (IC=-1.5