All Transistors. ISA1235AC1 Datasheet

 

ISA1235AC1 Datasheet and Replacement


   Type Designator: ISA1235AC1
   SMD Transistor Code: .MF_.ME
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT23
 

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ISA1235AC1 Datasheet (PDF)

 ..1. Size:189K  isahaya
isa1235ac1 isa1602am1.pdf pdf_icon

ISA1235AC1

SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati

 9.1. Size:577K  vishay
sisa12adn.pdf pdf_icon

ISA1235AC1

New ProductSiSA12ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0043 at VGS = 10 V 25 Material categorization:30 13.6 nC0.0060 at VGS = 4.5 V For definitions of compliance please see 25www.vishay.com/doc?99912PowerPAK

 9.2. Size:587K  vishay
sisa12dn.pdf pdf_icon

ISA1235AC1

New ProductSiSA12DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.)Definition TrenchFET Gen IV Power MOSFET0.0043 at VGS = 10 V 2530 13.6 nC 100 % Rg and UIS Tested0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/ECAPPLICAT

 9.3. Size:186K  isahaya
isa1287as1.pdf pdf_icon

ISA1235AC1

SMALL-SIGNAL TRANSISTOR ISA1287AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1287AS1 is a silicon PNP epitaxial type transistor. 4.0 Designed with high voltage, high collector current, dissipation and high hFE. Complementary with ISC3247AS1. 0.1 FEATURE High hFE hFE=400 to 800 0.45

Datasheet: KZT549 , KZT589 , KZT2955 , KZT3055 , KZT3904 , IMB10AFRA , IMB11AFRA , IR413 , 2SC2240 , ISA1283AS1 , ISA1284AS1 , ISA1286AS1 , ISA1287AS1 , ISA1399AS1 , ISA1530AC1 , ISA1602AM1 , ISA1603AM1 .

History: GC118 | DTA114YS3 | 2SA344 | KT639D | BCW81 | BC807-16LT3G | RN1106MFV

Keywords - ISA1235AC1 transistor datasheet

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