ISA2188AU1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISA2188AU1 📄📄
Código: AF
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.65 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 210 MHz
Ganancia de corriente contínua (hFE): 150
Encapsulados: SOT416
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ISA2188AU1 datasheet
isa2188au1.pdf
ISA2188AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISA2188AU1 is a silicon PNP epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE Hi
isa2188am1.pdf
ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current IC MAX =-650mA Low collector to emitter saturation voltage VCE
isa2166au1.pdf
ISA2166AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISA2166AU1 is a silicon PNP epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE Hi
Otros transistores... ISA1602AM1, ISA1603AM1, ISA1989AU1, ISA1993AS1, ISA1995AS1, ISA2166AM1, ISA2166AU1, ISA2188AM1, BD136, ISB1035AS1, IMB2AFRA, IMB3AFRA, IMD10AMT1G, IMD2AFRA, IMD3AFRA, IMD6AFRA, IMD9AFRA
History: IMD3AFRA
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