ISA2188AU1 Datasheet. Specs and Replacement
Type Designator: ISA2188AU1 📄📄
SMD Transistor Code: AF
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.65 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 210 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SOT416
ISA2188AU1 Substitution
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ISA2188AU1 datasheet
ISA2188AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISA2188AU1 is a silicon PNP epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE Hi... See More ⇒
ISA2188AM1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 2.1 ISA2188AM1 is a silicon PNP epitaxial type transistor 0.425 1.25 0.425 Designed with high collector current, low VCE(sat). FEATURE High collector current IC MAX =-650mA Low collector to emitter saturation voltage VCE... See More ⇒
ISA2166AU1 PRELIMINARY This datasheet is possibility of change. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Because this device is developing now. SILICON PNP EPITAXIAL TYPE Unit mm OUTLINE DRAWING DESCRIPTION 1.5 ISA2166AU1 is a silicon PNP epitaxial type transistor 0.35 0.8 0.35 Designed with high collector current, low VCE(sat). FEATURE Hi... See More ⇒
Detailed specifications: ISA1602AM1, ISA1603AM1, ISA1989AU1, ISA1993AS1, ISA1995AS1, ISA2166AM1, ISA2166AU1, ISA2188AM1, BD136, ISB1035AS1, IMB2AFRA, IMB3AFRA, IMD10AMT1G, IMD2AFRA, IMD3AFRA, IMD6AFRA, IMD9AFRA
Keywords - ISA2188AU1 pdf specs
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History: IMX2FRA | IMX8FRA
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