INC5001AC1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: INC5001AC1
Código: XY
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 240
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 130
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar INC5001AC1
INC5001AC1
Datasheet (PDF)
6.1. Size:136K isahaya
inc5001ap1.pdf 
INC5001AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=1A Low VCE(sat) VCEsat=0.25V
8.1. Size:230K isahaya
inc5004ac1.pdf
INC5004AC1 PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini
8.2. Size:109K isahaya
inc5004ap1.pdf
INC5004AP1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin
8.3. Size:137K isahaya
inc5006ac1.pdf
INC5006AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5006AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
8.4. Size:132K isahaya
inc5003ah1.pdf
PRELIMINARY INC5003AH1 NoticeThis is not a final specification Some parametric are subject to change. SILICON NPN EPITAXIAL TYPEFEATURE OUTLINE DRAWING UNIT Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A 6.602.30Complementary INA5003AH1 5.340.50APPLICATION Motor drive, IGBT drive, DC/DC convertor 1 2 30.127
8.5. Size:128K isahaya
inc5002ap1.pdf
INC5002AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=3A Low VCE(sat) VCEsat=0.6V m
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
