INC5001AC1 Datasheet and Replacement
Type Designator: INC5001AC1
SMD Transistor Code: XY
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: SOT23
INC5001AC1 Substitution
INC5001AC1 Datasheet (PDF)
inc5001ap1.pdf

INC5001AP1 For low frequency power amplify Silicon NPN EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INC5001AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=60V CE BHigh collector current IC=1A Low VCE(sat) VCEsat=0.25V
inc5004ac1.pdf

INC5004AC1 PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini
inc5004ap1.pdf

INC5004AP1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC5004AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mountin
Datasheet: IMH9AFRA , IMT18 , IMT1AFRA , IMT2AFRA , IMT3AFRA , IMT4FRA , IMX25 , IMX2FRA , S9014 , INC5001AP1 , INC5002AP1 , INC5003AH1 , INC5004AC1 , INC5004AP1 , INC5006AC1 , IMX3FRA , IMX8FRA .
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