INA5006AC1 Datasheet. Equivalente

 ..1. Size:132K  isahaya
 ina5006ac1.pdf

INA5006AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

 8.1. Size:106K  isahaya
 ina5005ac1.pdf

INA5005AC1 PRELIMINARY Notice This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

 8.2. Size:150K  isahaya
 ina5001ap1.pdf

SMALL-SIGNAL TRANSISTOR INA5001AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION INA5001AP1 is a super mini package resin sealed silicon PNP epitaxial transistor, OUTLINE DRAWING Unit It is designed for relay draive or Power supply application. 4.6 MAX . 1.5 1.6 FEATURE Super mini package for easy mounting C E B

 8.3. Size:106K  isahaya
 ina5001ac1.pdf

 8.4. Size:107K  isahaya
 ina5008ah1.pdf

PRELIMINARY INA5008AH1 Notice This is not a final specification Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE FEATURE OUTLINE DRAWING UNIT Low voltage VCE(sat) = -0.4V(MAX),Ic=-500mA 6.60 2.30 5.34 0.50 APPLICATION Small type machine low frequency voltage amplify application, Switching 1 2 3 0.127max 0.50 2.286 0.76

 8.5. Size:232K  isahaya
 ina5002ac1.pdf

INA5002AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE Super mini package for

 8.6. Size:128K  isahaya
 ina5002ap1.pdf

INA5002AP1 For low frequency power amplify Silicon PNP Epitaxial DESCRIPTION OUTLINE DRAWING UNIT INA5002AP1 is a silicon PNP epitaxial transistor designed for relay 4.6 MAX drive or Power supply application. 1.5 1.6 FEATURE Small package for easy mounting. High voltage VCEO=-60V C E B High collector current IC=-3A Low VCE(sat) VCE sat =-0.6