Биполярный транзистор INA5006AC1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: INA5006AC1
Маркировка: AEJ
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
Аналоги (замена) для INA5006AC1
INA5006AC1 Datasheet (PDF)
ina5006ac1.pdf
INA5006AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
ina5005ac1.pdf
INA5005AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
ina5001ap1.pdf
SMALL-SIGNAL TRANSISTOR INA5001AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION INA5001AP1 is a super mini package resin sealed silicon PNP epitaxial transistor, OUTLINE DRAWING Unit It is designed for relay draive or Power supply application. 4.6 MAX . 1.51.6FEATURE Super mini package for easy mounting CE B
ina5008ah1.pdf
PRELIMINARY INA5008AH1 NoticeThis is not a final specification Some parametric are subject to change. SILICON PNP EPITAXIAL TYPEFEATURE OUTLINE DRAWING UNIT Low voltage VCE(sat) = -0.4V(MAX),Ic=-500mA 6.602.305.340.50APPLICATION Small type machine low frequency voltage amplify application, Switching 1 2 30.127max0.502.286 0.76
ina5002ac1.pdf
INA5002AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE Super mini package for
ina5002ap1.pdf
INA5002AP1 For low frequency power amplify Silicon PNP EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INA5002AP1 is a silicon PNP epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=-60V CE BHigh collector current IC=-3A Low VCE(sat) VCEsat=-0.6
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050