INA5008AH1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: INA5008AH1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar INA5008AH1
INA5008AH1
Datasheet (PDF)
..1. Size:107K isahaya
ina5008ah1.pdf 
PRELIMINARY INA5008AH1 NoticeThis is not a final specification Some parametric are subject to change. SILICON PNP EPITAXIAL TYPEFEATURE OUTLINE DRAWING UNIT Low voltage VCE(sat) = -0.4V(MAX),Ic=-500mA 6.602.305.340.50APPLICATION Small type machine low frequency voltage amplify application, Switching 1 2 30.127max0.502.286 0.76
8.1. Size:106K isahaya
ina5005ac1.pdf
INA5005AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
8.2. Size:132K isahaya
ina5006ac1.pdf
INA5006AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack
8.3. Size:150K isahaya
ina5001ap1.pdf
SMALL-SIGNAL TRANSISTOR INA5001AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION INA5001AP1 is a super mini package resin sealed silicon PNP epitaxial transistor, OUTLINE DRAWING Unit It is designed for relay draive or Power supply application. 4.6 MAX . 1.51.6FEATURE Super mini package for easy mounting CE B
8.5. Size:232K isahaya
ina5002ac1.pdf
INA5002AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE Super mini package for
8.6. Size:128K isahaya
ina5002ap1.pdf
INA5002AP1 For low frequency power amplify Silicon PNP EpitaxialDESCRIPTION OUTLINE DRAWING UNIT INA5002AP1 is a silicon PNP epitaxial transistor designed for relay 4.6 MAXdrive or Power supply application. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO=-60V CE BHigh collector current IC=-3A Low VCE(sat) VCEsat=-0.6
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
