KTD1304S Todos los transistores

 ..1. Size:767K  kexin
 ktd1304s.pdf

SMD Type Transistors NPN Transistors KTD1304 (KTD1304S) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features High Emitter-Base Voltage VEBO = 12V(Min) High Reverse hFE 1 2 +0.02 +0.1 Low on Resistance 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

 7.1. Size:244K  secos
 ktd1304.pdf

KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES High emitter-base voltage VEBO=12V(Min) low on resistance Ron=0.6 (max)(IB=1mA) PACKAGE DIMENSIONS SOT-23 Collector 3 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D

 7.2. Size:354K  kec
 ktd1304.pdf

SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES E L B L High Emitter-Base Voltage VEBO=12V(Min.). DIM MILLIMETERS High Reverse hFE _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reverse hFE=20(Min.) (VCE=2V, IC=4mA). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low on Resistance RON=0.6 (Max.) (IB=1mA). E 2.40+0.30/-0.20 1 G 1.90

 7.3. Size:907K  htsemi
 ktd1304.pdf

KTD1304 SOT-23 TRANSISTOR (NPN) FEATURES High emitter-base voltage 1. BASE low on resistance 2. EMITTER 3.COLLECTOR MARKING MAX MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector

 7.4. Size:207K  lge
 ktd1304.pdf

KTD1304 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3.COLLECTOR Features High emitter-base voltage VEBO=12V(Min) low on resistance Ron=0.6 (max)(IB=1mA) MARKING MAX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emit

 7.5. Size:370K  wietron
 ktd1304.pdf

KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 3 1 2 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO 25 V Collector-Base Voltage VCEO 20 V Collector-Emitter Voltage V VEBO 12 Emitter-Base Voltage IC Collector Current-Continuous 0.3 A PC 0.2 W Collector Power Disspation Junction Temperature TJ 150 C -55 - 150 Storage Temperature Tstg C WE

 7.6. Size:939K  kexin
 ktd1304.pdf

SMD Type Transistors NPN Transistors KTD1304 (KTD1304S) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High Emitter-Base Voltage VEBO = 12V(Min) High Reverse hFE Low on Resistance 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vo