KTD1304S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTD1304S
Código: J3Y
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar KTD1304S
KTD1304S Datasheet (PDF)
ktd1304s.pdf
SMD Type TransistorsNPN TransistorsKTD1304 (KTD1304S)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features High Emitter-Base Voltage :VEBO = 12V(Min) High Reverse hFE1 2+0.02+0.1 Low on Resistance 0.15 -0.020.95 -0.1+0.11.9-0.21. Base2. Emitter3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
ktd1304.pdf
KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES High emitter-base voltage: VEBO=12V(Min) low on resistance: Ron=0.6(max)(IB=1mA) PACKAGE DIMENSIONS SOT-23Collector3Dim Min MaxA 2.800 3.0401BaseB 1.200 1.4002EmitterC 0.890 1.110D
ktd1304.pdf
SEMICONDUCTOR KTD1304TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO MUTING APPLICATION.FEATURESEL B LHigh Emitter-Base Voltage : VEBO=12V(Min.).DIM MILLIMETERSHigh Reverse hFE_+A 2.93 0.20B 1.30+0.20/-0.15: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).C 1.30 MAX23 D 0.40+0.15/-0.05Low on Resistance : RON=0.6(Max.) (IB=1mA).E 2.40+0.30/-0.201G 1.90
ktd1304.pdf
KTD1304SOT-23 TRANSISTOR (NPN) FEATURES High emitter-base voltage 1. BASE low on resistance 2. EMITTER 3.COLLECTOR MARKING: MAX MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector
ktd1304.pdf
KTD1304 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3.COLLECTOR Features High emitter-base voltage:VEBO=12V(Min) low on resistance:Ron=0.6(max)(IB=1mA) MARKING: MAX Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emit
ktd1304.pdf
KTD1304NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free312SOT-23ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO25 VCollector-Base VoltageVCEO20 VCollector-Emitter VoltageVVEBO 12Emitter-Base VoltageICCollector Current-Continuous 0.3 APC0.2 WCollector Power DisspationJunction Temperature TJ 150 C-55 - 150Storage Temperature Tstg CWE
ktd1304.pdf
SMD Type TransistorsNPN TransistorsKTD1304 (KTD1304S)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High Emitter-Base Voltage :VEBO = 12V(Min) High Reverse hFE Low on Resistance1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
