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TB100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TB100
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 700 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 14
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar TB100

 

TB100 Datasheet (PDF)

 ..1. Size:171K  nxp
tb100.pdf

TB100 TB100

TB100NPN power transistor19 December 2013 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54(TO92) plastic package intended for use in low power SMPS emitter switching circuits.2. Features and benefits Fast switching High base current drive capability High voltage capability Very low switc

 ..2. Size:248K  cn ween semi
tb100.pdf

TB100 TB100

TB100NPN power transistor30 September 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO92)plastic package intended for use in low power SMPS emitter switching circuits.2. Features and benefits Fast switching High base current drive capability High voltage capability Very low swit

 0.1. Size:75K  philips
mtb10010u 3.pdf

TB100 TB100

DISCRETE SEMICONDUCTORSDATA SHEETMTB10010UNPN microwave power transistor1997 Feb 20Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MTB10010UFEATURES QUICK REFERENCE DATAMicrowave performance for Tmb =25 C in a common base class C Input prematching cell allows annarrowband amplifier.ea

 0.2. Size:460K  st
stb100nf03l-03-1 stb100nf03l-03t4 stb100nf03l-03 stb100nf03l-03-1 stp100nf03l-03.pdf

TB100 TB100

STP100NF03L-03STB100NF03L-03 STB100NF03L-03-1N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NF03L-03 30V

 0.3. Size:1657K  st
stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf

TB100 TB100

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W

 0.4. Size:395K  st
stb100nf04t4.pdf

TB100 TB100

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

 0.5. Size:338K  st
stb100nf04l.pdf

TB100 TB100

STB100NF04LN-CHANNEL 40V - 0.0036 - 100A D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF04L 40 V

 0.6. Size:393K  st
stb100nf03l.pdf

TB100 TB100

STB100NF03L-03 STP100NF03L-03STB100NF03L-03-1N-CHANNEL 30V - 0.0026 -100A DPAK/IPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB100NF03L-03 30 V

 0.7. Size:441K  st
stb100nh02lt4.pdf

TB100 TB100

STB100NH02LN-channel 24V - 0.0052 - 60A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NH02L 24V

 0.8. Size:398K  st
stb100nf04 stp100nf04.pdf

TB100 TB100

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

 0.9. Size:557K  st
stb100n6f7.pdf

TB100 TB100

STB100N6F7N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTTAB STB100N6F7 60 V 5.6 m 100A 125 W Among the lowest RDS(on) on the market3 Excellent figure of merit (FoM)1 Low Crss/Ciss ratio for EMI immunity High avalanche ruggednessD2PAKApplications

 0.10. Size:648K  st
stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf

TB100 TB100

STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2

 0.11. Size:450K  st
stb100nh02l.pdf

TB100 TB100

STB100NH02LN-channel 24V - 0.0052 - 60A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NH02L 24V

 0.12. Size:106K  onsemi
nstb1005dxv5.pdf

TB100 TB100

NSTB1005DXV5T1GDual CommonBase-Collector BiasResistor TransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network312The BRT (Bias Resistor Transistor) contains a single transistor withR1a monolithic bias network consisting of two resistors; a series base R2resistor and a base-emitter resistor. These digital transistors

 0.13. Size:63K  onsemi
nstb1002dxv5.pdf

TB100 TB100

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter

 0.14. Size:63K  onsemi
nstb1002dxv5-d.pdf

TB100 TB100

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter

 0.15. Size:1472K  cn vbsemi
stb100nf04.pdf

TB100 TB100

STB100NF04www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please see DTO-263GSSSDDG

 0.16. Size:203K  inchange semiconductor
stb100n10f7.pdf

TB100 TB100

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB100N10F7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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