KTC3199-GR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3199-GR
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO92S
Búsqueda de reemplazo de transistor bipolar KTC3199-GR
KTC3199-GR
Datasheet (PDF)
6.1. Size:557K mcc
ktc3199-bl-gr-o-y.pdf 
KTC3199-OMCCMicro Commercial ComponentsTMKTC3199-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3199-GRPhone: (818) 701-4933Fax: (818) 701-4939 KTC3199-BLFeatures High DC Current Gain: hFE=70~700NPN General Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)Purpose Application Compl
7.1. Size:562K jiangsu
ktc3199.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S KTC3199 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High DC Current Gain3. BASE Complementary to KTA1267123 Equivalent Circuit C3199C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM
7.2. Size:78K kec
ktc3199.pdf
SEMICONDUCTOR KTC3199TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONSWITCHING APPLICATION.BFEATURES High DC Current Gain : hFE=70~700. Excellent hFE LinearityDIM MILLIMETERSOA 3.20 MAX: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).HM B 4.30 MAXC 0.55 MAX Low Noise : NF=1dB(Typ.), 10dB(Max.)._D 2.40 + 0.15E 1.27 Complementary to KTA1267.F 2.30
7.3. Size:60K kec
ktc3199l.pdf
SEMICONDUCTOR KTC3199LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.FEATURES B High DC Current Gain : hFE=70 700. Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAX Low Noise : NF=0.2dB(Typ.), 3dB(Max.).HM B 4.30 MAXC 0.55 MAX Complementary to KTA1267L._D 2.40 + 0.15E 1.27F 2.30C_+
7.4. Size:448K blue-rocket-elect
ktc3199m.pdf
KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FEHigh DC current gain, excellent hFE linearity, low noise / Applications General amplifier
Otros transistores... 2N3192
, 2N3193
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, 2N3199
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, 2N3204
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.
