TPCP8F01 Datasheet. Equivalente

 ..1. Size:252K  toshiba
 tpcp8f01.pdf

TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit mm Swtching Applications 0.33 0.05 0.05 M A Load Switch Applications 8 5 Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive 0.475 1 4 B 0.05 M B High DC current gain hFE = 20

 9.1. Size:286K  toshiba
 tpcp8404.pdf

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO /U-MOS ) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 Low drain-source ON-resistance P Channel RDS (ON) = 38 m (typ.) 0.05 M A 8 5 (VGS=-10V) N Channel RDS (ON) = 38 m (typ.) VGS=10V) High forward transfer admittance P Channel Yfs

 9.2. Size:209K  toshiba
 tpcp8603.pdf

TPCP8603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8603 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 Strobe Applications High DC current gain hFE = 120 300 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) 0.475 1 4 B 0.05 M B 0.65 High-speed switching tf = 120 ns (typ.) 2.9

 9.3. Size:250K  toshiba
 tpcp8204.pdf

TPCP8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit mm Small footprint due to small and thin package 0.33 0.05 Low drain-source ON resistance RDS (ON) = 38 m (typ.) M A 0.05 8 5 VGS=10V High forward transfer admittance Yfs = 8 S (typ.) Low leakage

 9.4. Size:172K  toshiba
 tpcp8604.pdf

TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications Unit mm 0.33 0.05 High breakdown voltage VCEO = -400 V 0.05 M A 8 5 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 0.475 1 4 B Collector-base voltage VCBO -400 V 0.05 M B 0.65 Collector-emitter voltage VCEO -400 V 2.9 0.1 A Emitte

 9.5. Size:201K  toshiba
 tpcp8g01 .pdf

TPCP8G01 TOSHIBA Multi-Chip Device Transistor Silicon PNP Epitaxial Type Field Effect Transistor Silicon P Channel MOS Type TPCP8G01 Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Multi-chip discrete device PNP Transistor and Channel MOS FET Small footprint due to small and thin package Absolute Maximum Ratings (Ta = 25 C) 0.475 1 4 B 0.05 M

 9.6. Size:189K  toshiba
 tpcp8004.pdf

TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8004 Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance

 9.7. Size:194K  toshiba
 tpcp8102.pdf

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 13.5 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current

 9.8. Size:228K  toshiba
 tpcp8111.pdf

TPCP8111 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8111 TPCP8111 TPCP8111 TPCP8111 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 5.2 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -10 V)

 9.9. Size:228K  toshiba
 tpcp8013.pdf

TPCP8013 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8013 TPCP8013 TPCP8013 TPCP8013 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.5 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 41.5 m (typ.) (VGS = 10 V

 9.10. Size:552K  toshiba
 tpcp8j01.pdf

TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 Lead(Pb)-Free 0.05 M A 8 5 Small mounting area due to small and thin package Low drain-source ON resistance P Channel RDS (ON) = 27 m (typ.) High forward transfer admitt

 9.11. Size:226K  toshiba
 tpcp8305.pdf

TPCP8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8305 TPCP8305 TPCP8305 TPCP8305 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VG

 9.12. Size:227K  toshiba
 tpcp8109.pdf

TPCP8109 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8109 TPCP8109 TPCP8109 TPCP8109 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 5.8 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 40.3 m (typ.) (VGS = -10 V

 9.13. Size:215K  toshiba
 tpcp8006.pdf

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance RDS (ON) = 6.5 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage curr

 9.14. Size:265K  toshiba
 tpcp8302.pdf

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8302 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance Yfs

 9.15. Size:221K  toshiba
 tpcp8303.pdf

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Low drain-source ON-resistance RDS(ON) = 41 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) 0.475 1 4 Low leakage current IDSS = -10

 9.16. Size:347K  toshiba
 tpcp8405.pdf

TPCP8405 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS -H) TPCP8405 TPCP8405 TPCP8405 TPCP8405 1. Applications 1. Applications 1. Applications 1. Applications Cell Phones Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)

 9.17. Size:311K  toshiba
 tpcp8j01 .pdf

TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 Lead(Pb)-Free 0.05 M A 8 5 Small mounting area due to small and thin package Low drain-source ON resistance P Channel RDS (ON) = 27 m (typ.) High forward transfer admit

 9.18. Size:237K  toshiba
 tpcp8010.pdf

TPCP8010 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8010 TPCP8010 TPCP8010 TPCP8010 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.9 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 19.1 m (typ.) (VGS = 10 V

 9.19. Size:256K  toshiba
 tpcp8a05-h.pdf

TPCP8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCP8A05-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm 0.33 0.05 Portable Equipment Applications 0.05 M A 8 5 Built-in a Schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching 0.475

 9.20. Size:237K  toshiba
 tpcp8207.pdf

TPCP8207 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8207 TPCP8207 TPCP8207 TPCP8207 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Small gate charge QSW = 4.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) =

 9.21. Size:249K  toshiba
 tpcp8003-h.pdf

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.33 0.05 0.05 M A 8 5 Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B 0.05 M B 0.65 Small gate charge

 9.22. Size:227K  toshiba
 tpcp8501.pdf

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =

 9.23. Size:317K  toshiba
 tpcp8403.pdf

TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans

 9.24. Size:347K  toshiba
 tpcp8407.pdf

TPCP8407 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 TPCP8407 TPCP8407 TPCP8407 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET QSW = 4.7 nC (typ.) P-channel MOSFET QSW = 5.5 nC (typ.) (3) Lo

 9.25. Size:211K  toshiba
 tpcp8510.pdf

TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit mm High-Speed, High-Voltage Switching Applications 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 High DC current gain hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching tf = 0.2 s (typ) B 0.05 M B 0.65 2.9 0.1

 9.26. Size:230K  toshiba
 tpcp8105.pdf

TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8105 TPCP8105 TPCP8105 TPCP8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.8 m (typ.) (VGS = -4.5

 9.27. Size:266K  toshiba
 tpcp8103-h.pdf

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.33 0.05 0.05 M A 8 5 Portable Equipment Applications CCFL Inverter Applications 0.475 1 4 B Small footprint due to a small and thin package 0.05 M B 0.65 2.9 0.1 High spe

 9.28. Size:294K  toshiba
 tpcp8301.pdf

TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8301 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.33 0.05 Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) High forward transfer admittan

 9.29. Size:184K  toshiba
 tpcp8511.pdf

TPCP8511 Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 TPCP8511 TPCP8511 TPCP8511 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters Photo Flashes 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation VCE(sat) = 0.18 V

 9.30. Size:224K  toshiba
 tpcp8106.pdf

TPCP8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8106 TPCP8106 TPCP8106 TPCP8106 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =

 9.31. Size:211K  toshiba
 tpcp8005-h.pdf

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications 0.33 0.05 0.05 M A Portable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4 B 0.05 M B 0.65 Small gate charge QSW = 5.0 nC (typ.

 9.32. Size:224K  toshiba
 tpcp8107.pdf

TPCP8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8107 TPCP8107 TPCP8107 TPCP8107 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 14.0 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 13.9 m (typ.) (VGS = -10

 9.33. Size:243K  toshiba
 tpcp8902 .pdf

TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4 B 0.05 M B Low collector-emitter satura

 9.34. Size:242K  toshiba
 tpcp8201.pdf

TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4 B 0.05 M B 0.65 Yfs = 7.0 S

 9.35. Size:210K  toshiba
 tpcp8505.pdf

TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu

 9.36. Size:279K  toshiba
 tpcp8401.pdf

TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS / -MOS ) TPCP8401 Switching Regulator Applications Load Switch Applications Unit mm 0.33 0.05 Lead(Pb)-Free 0.05 M A 8 5 Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin pack

 9.37. Size:351K  toshiba
 tpcp8406.pdf

TPCP8406 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS -H) TPCP8406 TPCP8406 TPCP8406 TPCP8406 1. Applications 1. Applications 1. Applications 1. Applications Cell Phones Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)

 9.38. Size:171K  toshiba
 tpcp8507.pdf

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 120 300 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.14 V (max) High-speed switching tf = 0.2 s (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 Absolute Maximum

 9.39. Size:200K  toshiba
 tpcp8601.pdf

TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Strobo Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.6 A) Low collector-emitter saturation VCE (sat) = -0.19 V (max) 0.475 1 4 B High-speed switching tf = 35 ns (typ.

 9.40. Size:254K  toshiba
 tpcp8h02.pdf

TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.33 0.05 0.05 M A STROBE FLASH APPLICATIONS 8 5 HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 0.475 1 4 B Multi-chip discrete device; built-in NPN transistor for main switch and 0.05 M B 0.65 N-ch MOS FET for drive 2.9

 9.41. Size:232K  toshiba
 tpcp8203.pdf

TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC/DC Converters 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance

 9.42. Size:242K  toshiba
 tpcp8902.pdf

TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4 B 0.05 M B Low collector-emitter satura

 9.43. Size:211K  toshiba
 tpcp8701.pdf

TPCP8701 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Inverter Lighting Applications Small footprint due to small and thin package High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) 0.475 1 4 B 0.05

 9.44. Size:181K  toshiba
 tpcp8007-h.pdf

TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCP8007-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 2.7 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.)

 9.45. Size:227K  toshiba
 tpcp8002.pdf

TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 Lead (Pb)-Free 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7 m (typ.) High forward transfer admittance 0.475 1 4 B Yfs = 36 S

 9.46. Size:247K  toshiba
 tpcp8901.pdf

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.1 A) NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation PNP VCE (sat) =

 9.47. Size:224K  toshiba
 tpcp8901 .pdf

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.1 A) NPN hFE = 400 to 1000 (IC = 0.1 A) 0.475 1 4 B 0.05 M B Low collector-emitter satur

 9.48. Size:231K  toshiba
 tpcp8011.pdf

TPCP8011 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8011 TPCP8011 TPCP8011 TPCP8011 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 25.5 m (typ.) (VGS = 10 V

 9.49. Size:233K  toshiba
 tpcp8205-h.pdf

TPCP8205-H MOSFETs Silicon N-Channel MOS (U-MOS ) TPCP8205-H TPCP8205-H TPCP8205-H TPCP8205-H 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance RDS(ON) = 20 m

 9.50. Size:200K  toshiba
 tpcp8g01.pdf

TPCP8G01 TOSHIBA Multi-Chip Device Transistor Silicon PNP Epitaxial Type Field Effect Transistor Silicon P Channel MOS Type TPCP8G01 Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Multi-chip discrete device PNP Transistor and Channel MOS FET Small footprint due to small and thin package Absolute Maximum Ratings (Ta = 25 C) 0.475 1 4 B 0.05 M

 9.51. Size:196K  toshiba
 tpcp8504.pdf

TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 5 8 High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 A 0

 9.52. Size:228K  toshiba
 tpcp8110.pdf

TPCP8110 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8110 TPCP8110 TPCP8110 TPCP8110 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 14 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 30.4 m (typ.) (VGS = -10 V)

 9.53. Size:201K  toshiba
 tpcp8602.pdf

TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Strobe Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation VCE (sat) = -0.2 V (max) 0.475 1 4 High-speed switching tf = 90 ns (typ.) B 0.05 M B

 9.54. Size:226K  toshiba
 tpcp8009.pdf

TPCP8009 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8009 TPCP8009 TPCP8009 TPCP8009 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 9.6 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 9.5 m (typ.) (VGS = 10 V)

 9.55. Size:209K  toshiba
 tpcp8008-h.pdf

TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 3.8 nC (typ.) Low drain-sour

 9.56. Size:163K  toshiba
 tpcp8402.pdf

TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications Unit mm DC-DC Converter Applications Low drain-source ON resistance P Channel R = 60 m (typ.) DS (ON) N Channel R = 38 m (typ.) DS (ON) High forward transfer admittance P Channel Y = 6.0

 9.57. Size:39K  toshiba
 tpcp8001-h.pdf

TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCP8001-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications 0.33 0.05 Portable Equipment Applications M +0.05 A Small footprint due to small and thin package High speed switching 0.17 0.02 B 0.33 0.05 0.05M B

 9.58. Size:229K  toshiba
 tpcp8306.pdf

TPCP8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8306 TPCP8306 TPCP8306 TPCP8306 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage

 9.59. Size:224K  toshiba
 tpcp8012.pdf

TPCP8012 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8012 TPCP8012 TPCP8012 TPCP8012 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 10 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 16.2 m (typ.) (VGS = 10 V)

 9.60. Size:253K  toshiba
 tpcp8h01.pdf

TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS 0.33 0.05 0.05 M A 8 5 LORD SWITCHING APPLICATIONS STROBE FLASH APPLICATIONS Multi-chip discrete device; built-in NPN transistor for main switch and 0.475 1 4 B N-ch MOS FET for drive 0.05 M B 0.65 Hig

 9.61. Size:230K  toshiba
 tpcp8202.pdf

TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC-DC Converters 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON-resistance RDS(ON) = 19 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) 0.475 1 4 B Low leakage current IDSS = 1

 9.62. Size:234K  toshiba
 tpcp8206.pdf

TPCP8206 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCP8206 TPCP8206 TPCP8206 TPCP8206 1. Applications 1. Applications 1. Applications 1. Applications Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 4.5 V) (3) Low leakage current IDSS = 1

 9.63. Size:223K  toshiba
 tpcp8101.pdf

TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance Yfs = 14 S (typ.) Low l

 9.64. Size:207K  kexin
 tpcp8404.pdf

SMD Type MOSFET Transistors Silicon P,N Channel MOSFET TPCP8404 0.33 0.05 Features 2-3V1G 0.05 M A 8 5 Low drain-source ON-resistance P Channel RDS(ON) = 38m (typ.)(VGS=-10V) N Channel RDS(ON) = 38m (typ.)(VGS=10V) High forward transfer admittance 0.475 1 4 B 0.05 M B 0.65 P Channel Yfs = 7.3S (typ.) 2.9 0.1 A N Channel Yfs = 8S (typ.) 0.8 0.05 Low leakage curr