KTC4075-GR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC4075-GR
Código: LGR
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 3.5
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOT323
SOT23
Búsqueda de reemplazo de transistor bipolar KTC4075-GR
KTC4075-GR
Datasheet (PDF)
6.1. Size:301K mcc
ktc4075-bl-gr-y-o.pdf 
KTC4075-OMCCKTC4075-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTC4075-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTC4075-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0
7.1. Size:65K kec
ktc4075v.pdf
SEMICONDUCTOR KTC4075VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERS2_High hFE : hFE=70~700. A 1.2 +0.05_B 0.8 +0.05Low Noise : NF=1dB(Typ.), 10dB(Max.). 13_C 0.5 + 0.05_D 0.3 + 0.05Complementary to KTA2014V._E
7.2. Size:744K kec
ktc4075.pdf
SEMICONDUCTOR KTC4075TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEAUTRESM B MDIM MILLIMETERSExcellent hFE Linearity _+A 2.00 0.20D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).2_+B 1.25 0.15_High hFE : hFE=70700.+C 0.90 0.1031D 0.3+0.10/-0.05Low Noise : NF=1dB(Typ.), 10dB(Max.)._+E 2.10 0.2
7.3. Size:65K kec
ktc4075e.pdf
SEMICONDUCTOR KTC4075ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBDIM MILLIMETERSExcellent hFE Linearity_+A 1.60 0.10D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+2 B 0.85 0.10_+C 0.70 0.10Low Noise : NF=1dB(Typ.), 10dB(Max.).31D 0.27+0.10/-0.05_Complementary to KTA2014E. E 1.60 0.10+
7.4. Size:63K kec
ktc4075f.pdf
SEMICONDUCTOR KTC4075FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).High hFE : hFE=70~700.Low Noise : NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS2_A 0.6 + 0.05Complementary to KTA2014F.3 _+B 0.8 0.05C 0.38+0.02/-0.041Thin Fine Pitc
7.5. Size:902K htsemi
ktc4075.pdf
KTC4075TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 15
7.6. Size:248K lge
ktc4075.pdf
KTC4075 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Volta
7.7. Size:1437K kexin
ktc4075.pdf
SMD Type TransistorsNPN TransistorsKTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA20141.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150mA Bas
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