TTC014 Todos los transistores

 ..1. Size:175K  toshiba
 ttc014.pdf

TTC014 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 TTC014 TTC014 TTC014 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = 0.1 A) (2) High collector

 9.1. Size:603K  toshiba
 ttc011b.pdf

TTC011B NPN TTC011B TTC011B TTC011B TTC011B 1. 1. 1. 1. 2. 2. 2. 2. (1) VCEO = 230 V ( ) (2) Cob = 20 pF ( ) (3)

 9.2. Size:171K  toshiba
 ttc011.pdf

TTC011 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 TTC011 TTC011 TTC011 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching LCD Backlighting 2. Features 2. Features 2. Features 2. Features (1) High collector breakdown voltage VCEO = 230 V (2) High DC current gain hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Interna

 9.3. Size:184K  toshiba
 ttc012.pdf

TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 TTC012 TTC012 TTC012 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High speed switching tf = 0.15 s (typ.) (IC = 0.5 A) (2) High collec

 9.4. Size:223K  toshiba
 ttc015b.pdf

TTC015B Bipolar Transistors Silicon NPN Epitaxial Type TTC015B TTC015B TTC015B TTC015B 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage VCE(sat) = 0.5 V (max) (IC = 1A) (3

 9.5. Size:492K  toshiba
 ttc017.pdf

TTC017 Bipolar Transistors Silicon NPN Epitaxial Type TTC017 TTC017 TTC017 TTC017 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed

 9.6. Size:175K  toshiba
 ttc013.pdf

TTC013 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 TTC013 TTC013 TTC013 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching LCD Backlighting 2. Features 2. Features 2. Features 2. Features (1) High collector breakdown voltage VCEO = 350 V (2) High DC current gain hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Interna

 9.7. Size:316K  toshiba
 ttc016.pdf

TTC016 Bipolar Transistors Silicon NPN Epitaxial Type TTC016 TTC016 TTC016 TTC016 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 3