TTC014 Datasheet, Equivalent, Cross Reference Search
Type Designator: TTC014
SMD Transistor Code: C014
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: NEW-PW-MOLD
TTC014 Transistor Equivalent Substitute - Cross-Reference Search
TTC014 Datasheet (PDF)
ttc014.pdf
TTC014Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC014TTC014TTC014TTC0141. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A)(2) High collector
ttc011b.pdf
TTC011B NPNTTC011BTTC011BTTC011BTTC011B1. 1. 1. 1. 2. 2. 2. 2. (1) : VCEO = 230 V ()(2) : Cob = 20 pF ()(3)
ttc011.pdf
TTC011Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC011TTC011TTC011TTC0111. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 230 V(2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A)3. Packaging and Interna
ttc012.pdf
TTC012Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC012TTC012TTC012TTC0121. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High speed switching : tf = 0.15 s (typ.) (IC = 0.5 A)(2) High collec
ttc015b.pdf
TTC015BBipolar Transistors Silicon NPN Epitaxial TypeTTC015BTTC015BTTC015BTTC015B1. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A)(2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A)(3
ttc017.pdf
TTC017Bipolar Transistors Silicon NPN Epitaxial TypeTTC017TTC017TTC017TTC0171. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A)(2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A)(3) High-speed
ttc013.pdf
TTC013Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC013TTC013TTC013TTC0131. Applications1. Applications1. Applications1. Applications High-Voltage Switching LCD Backlighting2. Features2. Features2. Features2. Features(1) High collector breakdown voltage: VCEO = 350 V(2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)3. Packaging and Interna
ttc016.pdf
TTC016Bipolar Transistors Silicon NPN Epitaxial TypeTTC016TTC016TTC016TTC0161. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A)(2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 3
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
