2N6736 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6736
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Empaquetado / Estuche: TO226
Búsqueda de reemplazo de transistor bipolar 2N6736
2N6736 Datasheet (PDF)
5.1. 2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf 
Size:50K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
5.2. 2n6732.pdf Size:26K _diodes
PNP SILICON PLANAR 2N6732 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I V I I
5.3. 2n6728 2n6729 2n6730.pdf Size:27K _diodes
PNP SILICON PLANAR 2N6728 2N6729 MEDIUM POWER TRANSISTORS 2N6730 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I V I
5.4. 2n6731.pdf Size:26K _diodes
NPN SILICON PLANAR 2N6731 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I V I I
5.5. 2n6738 2n6739 2n6740.pdf Size:153K _bocasemi
A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com
5.6. 2n6739.pdf Size:188K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6739 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode appl
5.7. 2n6738.pdf Size:188K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6738 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode appl
5.8. 2n6738 2n6739 2n6740.pdf Size:60K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION 1 Base Colle
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
