Справочник транзисторов. 2N6736

 

Биполярный транзистор 2N6736 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N6736

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 35 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO226

Аналоги (замена) для 2N6736

 

 

2N6736 Datasheet (PDF)

5.1. 2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf Size:50K _central

2N6736

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.2. 2n6732.pdf Size:26K _diodes

2N6736

PNP SILICON PLANAR 2N6732 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I V I I

 5.3. 2n6728 2n6729 2n6730.pdf Size:27K _diodes

2N6736

PNP SILICON PLANAR 2N6728 2N6729 MEDIUM POWER TRANSISTORS 2N6730 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I V I

5.4. 2n6731.pdf Size:26K _diodes

2N6736

NPN SILICON PLANAR 2N6731 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I V I I

 5.5. 2n6738 2n6739 2n6740.pdf Size:153K _bocasemi

2N6736
2N6736

A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com

5.6. 2n6738 2n6739 2n6740.pdf Size:60K _inchange_semiconductor

2N6736
2N6736

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION 1 Base Colle

5.7. 2n6739.pdf Size:188K _inchange_semiconductor

2N6736
2N6736

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6739 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode appl

5.8. 2n6738.pdf Size:188K _inchange_semiconductor

2N6736
2N6736

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6738 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode appl

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

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