TTD1415B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TTD1415B

Código: D1415B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO220SIS

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TTD1415B datasheet

 ..1. Size:181K  toshiba
 ttd1415b.pdf pdf_icon

TTD1415B

TTD1415B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B TTD1415B TTD1415B 1. Applications 1. Applications 1. Applications 1. Applications High-Power Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage VCE(sat) = 1.5

 ..2. Size:222K  inchange semiconductor
 ttd1415b.pdf pdf_icon

TTD1415B

isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 3A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Complement to Type TTB1020B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switc

 8.1. Size:152K  toshiba
 ttd1410b.pdf pdf_icon

TTD1415B

TTD1410B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1410B TTD1410B TTD1410B TTD1410B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 2 V , IC = 2 A) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packa

 9.1. Size:172K  toshiba
 ttd1409b.pdf pdf_icon

TTD1415B

TTD1409B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1409B TTD1409B TTD1409B TTD1409B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 600 (min) (VCE = 2 V , IC = 2 A) (2) Monolithic construction with built-in base-emitter shunt resistor 3. Packa

MOSTRAR MÁS

Otros transistores... TTC014, TTC015B, TTC016, TTC017, TTC3710B, TTC5460B, TTD1409B, TTD1410B, 2222A, TTD1509B, TFM1759, TFN1036, TFN1037, TFN1386L, TFN1424, TFN1514, TFN1590