Биполярный транзистор TTD1415B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TTD1415B
Маркировка: D1415B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO220SIS
TTD1415B Datasheet (PDF)
ttd1415b.pdf
TTD1415BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1415BTTD1415BTTD1415BTTD1415B1. Applications1. Applications1. Applications1. Applications High-Power Switching Hammer Drivers2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)(2) Low collector-emitter saturation voltage: VCE(sat) = 1.5
ttd1415b.pdf
isc Silicon NPN Darlington Power Transistor TTD1415BDESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type TTB1020BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitc
ttd1410b.pdf
TTD1410BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1410BTTD1410BTTD1410BTTD1410B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 2000 (min) (VCE = 2 V , IC = 2 A)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packa
ttd1409b.pdf
TTD1409BBipolar Transistors Silicon NPN Triple-Diffused TypeTTD1409BTTD1409BTTD1409BTTD1409B1. Applications1. Applications1. Applications1. Applications High-Voltage Switching2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 600 (min) (VCE = 2 V , IC = 2 A)(2) Monolithic construction with built-in base-emitter shunt resistor3. Packa
ttd1409b.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor TTD1409BDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use high-voltage switching applicatio
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
