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TFN1768 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TFN1768
   Código: AJ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23
 

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TFN1768 Datasheet (PDF)

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TFN1768

Tin Far Electronic CO.,LTDPage No: 1/6TFN1768 Description The TFN1768 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (min.)CEO High collector current, I =1A (DC)C(max) Pb-free package Symbol Outline SOT-23 TFN1768BBaseC

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TFN1768

Tin Far Electronic CO.,LTD Page No: 1/4 TFN1759 Description High breakdown voltage. (BV =-400V)CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA.CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505N3. Symbol OutlineTFN1759 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol L

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TFN1768

Tin Far Electronic CO.,LTDPage No: 1/6TFN1721 Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free package Symbol OutlineTFN1721 SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -300 VCollector-Emitter Voltage V

Otros transistores... TFN1036 , TFN1037 , TFN1386L , TFN1424 , TFN1514 , TFN1590 , TFN1721 , TFN1759 , BC549 , TSC5301DCT , TSC5302DCH , TSC5302DCP , TSC5303DCH , TSC5303DCP , TSC5304DCH , TSC5304DCP , TSC5304EDCH .

History: FZT689B | ES3121 | UN1119 | BSV44 | 2SD1453 | BFQ51 | NPS3708

 

 
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