TFN1768 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN1768
SMD Transistor Code: AJ
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
TFN1768 Transistor Equivalent Substitute - Cross-Reference Search
TFN1768 Datasheet (PDF)
tfn1768.pdf
Tin Far Electronic CO.,LTDPage No: 1/6TFN1768 Description The TFN1768 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (min.)CEO High collector current, I =1A (DC)C(max) Pb-free package Symbol Outline SOT-23 TFN1768BBaseC
tfn1759.pdf
Tin Far Electronic CO.,LTD Page No: 1/4 TFN1759 Description High breakdown voltage. (BV =-400V)CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA.CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505N3. Symbol OutlineTFN1759 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol L
tfn1721.pdf
Tin Far Electronic CO.,LTDPage No: 1/6TFN1721 Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free package Symbol OutlineTFN1721 SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -300 VCollector-Emitter Voltage V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
