All Transistors. TFN1768 Datasheet

 

TFN1768 Datasheet and Replacement


   Type Designator: TFN1768
   SMD Transistor Code: AJ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
 

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TFN1768 Datasheet (PDF)

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TFN1768

Tin Far Electronic CO.,LTDPage No: 1/6TFN1768 Description The TFN1768 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (min.)CEO High collector current, I =1A (DC)C(max) Pb-free package Symbol Outline SOT-23 TFN1768BBaseC

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TFN1768

Tin Far Electronic CO.,LTD Page No: 1/4 TFN1759 Description High breakdown voltage. (BV =-400V)CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA.CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505N3. Symbol OutlineTFN1759 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol L

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TFN1768

Tin Far Electronic CO.,LTDPage No: 1/6TFN1721 Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free package Symbol OutlineTFN1721 SOT-23BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -300 VCollector-Emitter Voltage V

Datasheet: TFN1036 , TFN1037 , TFN1386L , TFN1424 , TFN1514 , TFN1590 , TFN1721 , TFN1759 , BC549 , TSC5301DCT , TSC5302DCH , TSC5302DCP , TSC5303DCH , TSC5303DCP , TSC5304DCH , TSC5304DCP , TSC5304EDCH .

History: 2SB818 | TSC5301DCT | BD537J | 2SC1504 | 2SC3059 | TFN1721 | SD1405

Keywords - TFN1768 transistor datasheet

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