TSC5327CZ
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSC5327CZ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1200
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 60
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar TSC5327CZ
TSC5327CZ
Datasheet (PDF)
..1. Size:102K taiwansemi
tsc5327cz.pdf 
TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 800V 2. Collector 3. Emitter BVCBO 1200V IC 4A VCE(SAT) 3V @ IC / IB = 2.5A / 0.5A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS
9.1. Size:374K taiwansemi
tsc5303d.pdf
TSC5303D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 3A VCE(SAT) 0.17V @ IC=1A, IB=0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable
9.2. Size:401K taiwansemi
tsc5301dct.pdf
TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread E
9.3. Size:261K taiwansemi
tsc5304ed.pdf
TSC5304ED High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base 2. Collector BVCEO 400V 3. Emitter BVCBO 700V IC 4A VCE(SAT) 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation Low Base Drive Requirement Suitable for Half
9.4. Size:203K taiwansemi
tsc5304d.pdf
TSC5304D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable S
9.5. Size:233K taiwansemi
tsc5302d.pdf
TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab
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