TSC5327CZ - параметры, поиск аналогов, даташиты транзистора

TSC5327CZ Datasheet (PDF)

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TSC5327 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 800V 2. Collector 3. Emitter BVCBO 1200V IC 4A VCE(SAT) 3V @ IC / IB = 2.5A / 0.5A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS

9.1. Size:374K taiwansemi
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TSC5303D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 3A VCE(SAT) 0.17V @ IC=1A, IB=0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable

9.2. Size:401K taiwansemi
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TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread E

9.3. Size:261K taiwansemi
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TSC5304ED High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base 2. Collector BVCEO 400V 3. Emitter BVCBO 700V IC 4A VCE(SAT) 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation Low Base Drive Requirement Suitable for Half