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TS13002ACT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TS13002ACT
   Código: TSC13002A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 21 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO92

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TS13002ACT Datasheet (PDF)

 6.1. Size:190K  taiwansemi
ts13002a.pdf

TS13002ACT
TS13002ACT

TS13002A High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 6.2. Size:278K  taiwansemi
ts13002a b07.pdf

TS13002ACT
TS13002ACT

TS13002A High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 7.1. Size:389K  taiwansemi
ts13002ct.pdf

TS13002ACT
TS13002ACT

TS13002 High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.2. Size:278K  taiwansemi
ts13002 b07.pdf

TS13002ACT
TS13002ACT

TS13002 High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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